SavantIC Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUW13W Open emitter BUW13AW BUW13W VALUE 850 UNIT V 1000 Open base BUW13AW 400 V 450 Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 175 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX UNIT 0.7 K/W SavantIC Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUW13W MIN TYP. MAX 400 IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W UNIT V 450 IC=10A; IB=2A BUW13AW IC=8A; IB=1.6A BUW13W IC=10A; IB=2A BUW13AW IC=8A; IB=1.6A 1.5 V 1.6 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUW13W IC=10A ;IB1=-IB2=-2A For BUW13AW IC=8A ;IB1=-IB2=-1.6A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUW13W BUW13AW