SAVANTIC BUW13

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW13 BUW13A
DESCRIPTION
·With TO-3PN package
·High voltage,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BUW13
VCBO
Collector-base voltage
400
Open base
BUW13A
VEBO
Emitter-base voltage
V
1000
BUW13
Collector-emitter voltage
UNIT
850
Open emitter
BUW13A
VCEO
VALUE
V
450
Open collector
9
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
IBM
Base current-peak
9
A
PT
Total power dissipation
175
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~175
TC=25
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW13 BUW13A
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUW13
MIN
TYP.
MAX
400
IC=0.1A ; IB=0; L=25mH
BUW13A
BUW13
V
450
IC=10A; IB=2A
BUW13A
IC=8A; IB=1.6A
BUW13
IC=10A; IB=2A
BUW13A
UNIT
1.5
V
1.6
V
IC=8A; IB=1.6A
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
TC=125
1.0
4.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=20mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1.5A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUW13
IC=10A ;IB1=-IB2=2A
For BUW13A
IC=8A ;IB1=-IB2=1.6A
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10mm)
3
BUW13 BUW13A