isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44Q1/3/5 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE D44Q1 200 D44Q3 250 D44Q5 300 D44Q1 125 D44Q3 175 D44Q5 225 UNIT V V Emitter-Base Voltage 7 V Collector Current-Continuous 4 A Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ Junction Temperature Storage Temperature Range 31.25 W 1.67 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44Q1/3/5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS D44Q1 VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q3 MIN TYP. MAX UNIT 125 IC= 10mA ;IB= 0 B D44Q5 V 175 225 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.3 V D44Q1 VCB= 200V;IE= 0 10 D44Q3 VCB= 250V;IE= 0 10 D44Q5 VCB= 300V;IE= 0 10 ICBO Collector Cutoff Current B B μA hFE-1 DC Current Gain IC= 0.2A ; VCE= 10V 30 hFE-2 DC Current Gain IC= 2A ; VCE= 10V 20 Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 20 MHz Output Capacitance IE= 0; VCB= 10V; f= 1MHz 32 pF fT COB Switching Times ton Delay Time tstg Storage Time tf VCC= 50V IC= 1A; IB1= -IB2= 0.1A Fall Time isc Website：www.iscsemi.cn 2 5 0.4 μs 2.0 μs 1.7 μs