ISC 2SC3480

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3480
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
3.5
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3480
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
1500
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
40
130
mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
VECF
C-E Diode Forward Voltage
IF= 2.5A
2.0
V
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
fT
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
TYP.
3
MAX
UNIT
MHz