ISC S2000AF

Inchange Semiconductor
Product Specification
S2000AF
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3P(H)IS package
・High voltage
・Fast switching
APPLICATIONS
・Horizontal deflection for color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
PARAMETER
CONDITIONS
C
I
M
E
S
E
NG
Collector-base voltage
A
H
C
IN
OND
Open emitter
R
O
T
UC
VALUE
UNIT
1500
V
Collector-emitter voltage
Open base
700
V
Emitter-base voltage
Open collector
10
V
Collector current
8
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
2.5
℃/W
VEBO
IC
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
S2000AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
TC=125℃
1
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
fT
体
导
半
Transition frequency
固电
Switching times inductive load
ts
tf
Storage time
IC=0.1A ; VCE=5V;f=5MHz
EM
S
E
NG
A
H
C
IN
Fall time
CONDITIONS
MIN
TYP.
MAX
UNIT
8
D
N
O
IC
R
O
T
UC
7
MHz
7
μs
0.55
μs
IC=4.5A ; hFE=2.5; VCC=140V
LC=0.9mH; LB=3μH
2
Inchange Semiconductor
Product Specification
S2000AF
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3