SD103AWS TH R U SD103CWS FEATURES SMALL SIGNAL CHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R SOD-323 For general purpose applications The SD103AWS to SD103CWS series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppressions, efficient full (1.7+0.1 ( wave bridges in telephone subsets, and blocking diodes in rechargeable JF low voltage battery systems. These diodes are also available in the Mini-MELF case with the type designation LL103A toLL103C ,in the DO-35 case with type designation SD103A to SD103C and in the SOD-123 case with type designation SD103AW to SW103CW MECHANICAL DATA Case: SOD-323 plastic case Weight: Approx. 0.004 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) VRRM VRRM VRRM Ptot IFSM TJ TSTG SD103AWS SD103BWS SD103CWS Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range Units Value Symbols Peak Reverse Voltage 15 V V V mW A 125 C 40 30 20 400 1) -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Min. Typ. Max. Unis IR IR IR 5 5 5 mA mA mA Forward voltage drop at IF=20mA IF=200mA VF VF 0.37 0.6 V V Junction Capacitance at VR=0V ,f=1MHz CJ 50 Reverse Recovery time at IF=IR=50mA,recover to 200mA trr 10 SD103AWS SD103BWS SD103CWS Leakage current at VR=30V VR=20V VR=10V recover to 0.1 IR Thermal resistance,junction to Ambient RqJA pF ns 650 1) C/W 1) Valid provided that electrodes are kept at ambient temperature(SOD-323) 2-116 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM