TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range JAN JANTX JANTXV Symbol Value Unit VCEO VCBO VEBO IC 60 60 5.0 50 Vdc Vdc Vdc mAdc PT TJ, Tstg One Both Section 1 Sections2 0.5 0.6 -65 to +200 W C TO-78* 0 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CBO 60 Vdc V(BR)CEO 60 Vdc V(BR)EBO 5.0 Vdc OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICBO 10 ηAdc IEBO 10 ηAdc 120101 Page 1 of 2 2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. 100 150 150 150 125 450 450 450 75 225 300 300 300 250 900 900 900 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc 2N3810, 2N3810L hFE IC = 1.0 µAdc, VCE = 5.0Vdc IC = 10 µAdc, VCE = 5.0 Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 100 µAdc, IB = 10 µAdc IC = 1.0 mAdc, IB = 100 µAdc Base-Emitter Saturation Voltage IC = 100 µAdc, IB = 10 µAdc IC = 1.0 mAdc, IB = 100 µAdc Base-Emitter Non-Saturation Voltage VCE = 5.0 Adc, IC = 100 µAdc 2N3811, 2N3811L VCE(sat) 0.2 0.25 Vdc VBE(sat) 0.7 0.8 Vdc VBE 0.7 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3810, L 2N3811, L Small-Signal Short Circuit Input Impedance IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3810, L 2N3811, L Small-Signal Short Circuit Output Admittance IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Noise Figure 2N3810, L IC = 100 µAdc, VCE = 10 Vdc, f = 100 Hz, RG = 3.0 kΩ IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG = 3.0 kΩ IC = 100 µAdc, VCE = 10 Vdc, f = 10 kHz, RG = 3.0 kΩ IC = 100 µAdc, VCE = 10 Vdc, f = 10 Hz to 15.7 kHz, RG = 3.0 kΩ IC = 100 µAdc, IC = 100 µAdc, IC = 100 µAdc, IC = 100 µAdc, VCE = 10 Vdc, VCE = 10 Vdc, VCE = 10 Vdc, VCE = 10 Vdc, 2N3811, L f = 100 Hz, RG = 3.0 kΩ f = 1.0 kHz, RG = 3.0 kΩ f = 10 kHz, RG = 3.0 kΩ f = 10 Hz to 15.7 kHz, RG = 3.0 kΩ (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe 1.0 1.0 5.0 hfe 150 300 600 900 hje 3.0 3.0 30 40 kΩ hoe 5.0 60 µmhos Cobo 5.0 pF Cibo 8.0 pF F1 F2 F3 F4 7.0 3.0 2.5 3.5 dB F1 F2 F3 F4 4.0 1.5 2.0 2.5 dB 120101 Page 2 of 2