Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION ・・With TO-220 package ・High power dissipation APPLICATIONS ・For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N5490/5494 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5492 Open emitter 75 2N5496 90 2N5490/5494 40 2N5492 Emitter-base voltage UNIT 60 Open base 2N5496 VEBO VALUE 55 V V 70 Open collector 5 V IC Collector current 7 A IB Base current 3 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5490/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 VBE ICEV Collector-emitter saturation voltage TYP. MAX IC=0.1A ;IB=0 V 55 70 2N5490 IC=2.0A;IB=0.2A 2N5492 IC=2.5A;IB=0.25A 2N5494 IC=3.0A;IB=0.3A 2N5496 IC=3.5A;IB=0.35A 2N5490 IC=2.0A ; VCE=4V 1.1 2N5492 IC=2.5A ; VCE=4V 1.3 2N5494 IC=3.0A ; VCE=4V 1.5 2N5496 IC=3.5A ; VCE=4V 1.7 2N5492 VCE=70V;VBE=1.5V 2N5490/5494 VCE=55V;VBE=1.5V 2N5496 VCE=85V;VBE=1.5V 1.0 Base-emitter on voltage Collector cut-off current UNIT 40 2N5496 VCEsat MIN V V 1.0 mA ICER Collector cut-off current VCE=Rated VCEO;RBE=100Ω 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE fT 2N5490 IC=2.0A ; VCE=4V 2N5492 IC=2.5A ; VCE=4V 2N5494 IC=3.0A ; VCE=4V 2N5496 IC=3.5A ; VCE=4V 20 DC current gain Transition frequency IC=0.5A ; VCE=4V JMnic 0.8 100 MHz Product Specification Silicon NPN Power Transistors www.jmnic.com 2N5490 2N5492 2N5494 2N5496 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic