Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5881 VCBO Collector-base voltage VEBO Collector-emitter voltage V 80 2N5881 60 Open base 2N5882 Emitter-base voltage UNIT 60 Open emitter 2N5882 VCEO VALUE V 80 Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation 160 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.1 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(sus) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5881 MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 2N5882 V 80 VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=3.75A 4.0 V VBEsat Collector-emitter saturation voltage IC=15A;IB=3.75A 2.5 V VBE Collector-emitter on voltage IC=6A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 0.5 mA ICEO Collector cut-off current 1.0 mA 2N5881 2N5882 VCE=30V; IB=0 VCE=40V; IB=0 ICEX Collector cut-off current VCE=ratedVCE; VBE=1.5V TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=2A ; VCE=4V 35 hFE-2 DC current gain IC=6A ; VCE=4V 20 hFE-3 DC current gain IC=15A ; VCE=4V 4 Trainsistion frequency IC=1A ; VCE=10V 4 fT JMnic 100 MHz Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic