Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 140 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V VBEsat Collector-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 2.0 mA ICEO Collector cut-off current VCE=70V; IB=0 2.0 mA Collector cut-off current (VBE(off)=1.5V) VCE=ratedVCB 2.0 ICEX mA VCE=ratedVCB; TC=150℃ 7.0 5.0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=8A ; VCE=2V 15 hFE-2 DC current gain IC=16A ; VCE=2V 4 COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz fT Transition frequency IC=1A ; VCE=20V ;f=0.5MHz JMnic 60 500 1.0 mA pF MHz Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic