Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6296 VCBO Collector-base voltage 60 Open base 2N6298 VEBO Emitter-base voltage V 80 2N6296 Collector-emitter voltage UNIT 60 Open emitter 2N6297 VCEO VALUE V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 8 A IB Base current 80 mA PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 3.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2N6296 MIN TYP. MAX UNIT 60 IC=50mA ; IB=0 2N6297 V 80 VCEsat-1 Collector-emitter saturation voltage IC=2A ;IB=8mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=40mA 3.0 V Base-emitter saturation voltage IC=4A ;IB=40mA 4.0 V VBE Base -emitter on voltage IC=2A ; VCE=3V 2.8 V ICEX Collector cut-off current VCE=RatedVCE;VBE(off)=1.5V TC=150℃ 0.5 5.0 mA ICEO Collector cut-off current VCE=1/2Rated VCEO; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=2A ; VCE=3V 750 hFE-2 DC current gain IC=4A ; VCE=3V 100 fT Transition frequency IC=1.5A ; VCE=3V;f=1.0MHz 4.0 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz VBEsat JMnic 18000 MHz 200 pF Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic