Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls ・Solenoid and relay drivers ・Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 10 A IE Emitter current 25 A IEM Emitter current-peak 50 A PT Total power dissipation 175 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10A IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A IB=3A 5.0 V Base-emitter saturation voltage IC=10A IB=2A 1.6 V ICEV Collector cut-off current VCEV=850V VBE(off)=1.5V TC=100℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=2V 12 60 hFE-2 DC current gain IC=10A ; VCE=2V 6 30 Transition frequency IC=0.5A ; VCE=10V 6 35 MHz 0.05 μs 1.0 μs 4.0 μs 0.8 μs VBEsat fT 400 UNIT V Switching times td Delay time tr Rise time ts Storage time tf Fall time IC=10A; IB1=-IB2=2.0A VCC=250V; tp=0.1ms; Duty Cycle≤2.0% JMnic Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic