JMnic Product Specification 2N6653 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS ・Switcing regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 20 A ICM Collector current-peak 30 A PT Total power dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification 2N6653 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V V(BR)CBO Collector-emitter breakdown voltage IC=1mA ; IE=0 350 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 1.8 V Base-emitter saturation voltage IC=15A; IB=3A 1.8 V ICEV Collector cut-off current VCE=350V;VBE(off)=-1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE -2 DC current gain IC=15A ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V VBEsat fT 2 50 15 MHz JMnic Product Specification 2N6653 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3