JMNIC 2SB632

JMnic
Product Specification
2SB632 2SB632K
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD612/612K
・High collector dissipation
・Wide ASO(Safe Operating Area)
APPLICATIONS
・25V/35V, 2A low-frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB632
VCBO
Collector-base voltage
-25
Open base
2SB632K
VEBO
Emitter-base voltage
IC
V
-35
2SB632
Collector-emitter voltage
UNIT
-25
Open emitter
2SB632K
VCEO
VALUE
V
-35
Open collector
-5
V
Collector current (DC)
-2
A
ICM
Collector current-Peak
-3
A
PD
Total power dissipation
Ta=25℃
1
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB632 2SB632K
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
2SB632
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
-25
IC=-1mA; RBE=∞
2SB632K
V
-35
2SB632
Collector-base
breakdown voltage
UNIT
-25
IC=-10μA ;IE=0
V
-35
2SB632K
Emitter-base breakdown voltage
IE=-10μA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-0.4
-0.9
V
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-1.1
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
60
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V
30
Transition frequency
IC=-50mA ; VCE=-10V
100
MHz
Collector output capacitance
f=1MHz ; VCB=-10V
45
pF
0.06
μs
0.08
μs
0.40
μs
fT
COB
-5
V
320
Switching times
ton
Turn-on time
tf
Fall time
tstg
‹
IC=500mA ; VCE=12V
IB1=-IB2=50mA
Storage time
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2
JMnic
Product Specification
2SB632 2SB632K
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB632 2SB632K
Silicon PNP Power Transistors
4