JMNIC 2SA1021

JMnic
Product Specification
2SA1021
Silicon PNP Power Transistors
DESCRIPTION
・With TO-126 package
・High breakdown voltage
・Large current capacity
APPLICATIONS
・For color TV sound output;converters
Inverters applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1.5
A
ICM
Collector current-Peak
-2.5
A
PC
Collector power dissipation
Ta=25℃
1.0
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1021
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; RBE=∞
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA; IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.2
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-150mA ; VCE=-5V
60
Transition frequency
IC=-50mA ; VCE=-10V
15
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
320
MHz
JMnic
Product Specification
2SA1021
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3