JMnic Product Specification 2SA1069 2SA1069A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2516/2516A ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC converters ・High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SA1069 Emitter-base voltage UNIT -80 V -60 Open base 2SA1069A VEBO VALUE V -80 Open collector -12 V IC Collector current -5 A ICM Collector current-Peak -10 A IB Base current -2.5 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1069 2SA1069A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1069 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -60 IC=-3.0A ,IB=-0.3A;L=1mH 2SA1069A V -80 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -0.6 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V -10 μA -10 μA ICBO 2SA1069 VCB=-60V; IE=0 2SA1069A VCB=-80V; IE=0 Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.3A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 40 200 Switching times ton Turn-on time tstg Storage time tf IC=-3A ; VCC=-50V IB1=-IB2=-0.3A;RL=17Ω Fall time hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 μs 2.5 μs 0.5 μs JMnic Product Specification 2SA1069 2SA1069A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3