JMNIC 2SA1069

JMnic
Product Specification
2SA1069 2SA1069A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2516/2516A
・Low collector saturation voltage
APPLICATIONS
・Switching regulators
・DC-DC converters
・High-frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SA1069
Emitter-base voltage
UNIT
-80
V
-60
Open base
2SA1069A
VEBO
VALUE
V
-80
Open collector
-12
V
IC
Collector current
-5
A
ICM
Collector current-Peak
-10
A
IB
Base current
-2.5
A
PC
Collector power dissipation
Ta=25℃
1.5
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1069 2SA1069A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1069
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
-60
IC=-3.0A ,IB=-0.3A;L=1mH
2SA1069A
V
-80
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
-10
μA
-10
μA
ICBO
2SA1069
VCB=-60V; IE=0
2SA1069A
VCB=-80V; IE=0
Collector
cut-off current
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
40
200
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-3A ; VCC=-50V
IB1=-IB2=-0.3A;RL=17Ω
Fall time
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
2.5
μs
0.5
μs
JMnic
Product Specification
2SA1069 2SA1069A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3