JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1018 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdownvoltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.4 V ICBO Collector cut-off current VCB=-100V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 Transition frequency VCE=-4V;IC=-1A 10 MHz Collector output capacitance f=1MHz ; VCB=-10V;IE=0 250 pF 0.4 μs 2.5 μs 0.5 μs fT COB CONDITIONS MIN TYP. MAX -80 UNIT V 240 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-0.3A VCC=30V ,RL=10Ω Fall time hFE-1 Classifications O Y 70-140 120-240 2 JMnic Product Specification 2SB1018 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB1018 Silicon PNP Power Transistors 4