JMnic Product Specification 2SA1757 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Wide area of safe operation APPLICATIONS ・For switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-peak -10 A PC Collector power dissipation TC=25℃ 25 Ta=25℃ 1 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1757 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage IC=-3A, IB=-0.15A -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-4A, IB=-0.2A -0.5 V VBEsat-1 Base-emitter saturation voltage IC=-3A, IB=-0.15A -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-4A, IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-100V, IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-2V Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 130 pF fT Transition frequency IC=-0.5A ; VCE=-10V 80 MHz 160 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A ; RL=10Ω IB1=- IB2=-0.15A VCC≈-30V 2 0.3 μs 1.5 μs 0.3 μs JMnic Product Specification 2SA1757 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3