JMnic Product Specification 2SA2031 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Complement to type 2SC5669 ・Wide area of safe operation ・Large current capacitance APPLICATIONS ・For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -250 V VCEO Collector-emitter voltage Open base -230 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A ICM Collector current-peak -30 A PC Collectorl power dissipation Ta=25℃ 2.5 W TC=25℃ 140 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA2031 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -230 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -250 V V(BREBO Emitter-base breakdown voltage IE=-5mA; IC=0 -6 V Collector-emitter saturation voltage IC=-7.5 A;IB=-0.75A VBE Base-emitter saturation voltage ICBO VCEsat CONDITIONS MIN TYP. -0.3 MAX UNIT -2.0 V IC=-7.5A ; VCE=-5V -1.5 V Collector cut-off current VCB=-250V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-7.5A ; VCE=-5V 35 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-5V 10 MHz 0.45 μs 1.75 μs 0.25 μs 160 Switching times ton Turn-on time tstg Storage time tf IC=-7.5A;RL=6.67Ω IB1=-IB2=-0.75A VCC=-50V Fall time 2 JMnic Product Specification 2SA2031 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SA2031 Silicon PNP Power Transistors 4