Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V(Min) ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 1.5 A 5 A 0.8 A 40 W IC Collector current ICM Collector current-peak IB Base current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 7 V VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A 2.0 V VBEsat Base-emitter saturation voltage IC=0.75A; IB=0.15A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 10 hFE-2 DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 15 MHz COB Output capacitance f=10MHz ; VCB=10V 30 pF 40 Switching times ton Turn-on time tstg Storage time tf VCC=400V; IC=1A IB1=0.2A;IB2=-0.4A; RL=400Ω Fall time hFE-1 classifications K L M 10-20 15-30 20-40 2 1.0 μs 3.0 μs 0.7 μs Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors 4