JMNIC 2SC3149

Product Specification
www.jmnic.com
2SC3149
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High breakdown voltage:
VCBO=900V(Min)
・Fast switching speed.
・Wide ASO (Safe Operating Area)
APPLICATIONS
・800V/1.5A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
1.5
A
5
A
0.8
A
40
W
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Product Specification
www.jmnic.com
2SC3149
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IB=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=0.75A; IB=0.15A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=0.75A; IB=0.15A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
10
hFE-2
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.1A ; VCE=10V
15
MHz
COB
Output capacitance
f=10MHz ; VCB=10V
30
pF
40
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
VCC=400V; IC=1A
IB1=0.2A;IB2=-0.4A;
RL=400Ω
Fall time
hFE-1 classifications
K
L
M
10-20
15-30
20-40
2
1.0
μs
3.0
μs
0.7
μs
Product Specification
www.jmnic.com
2SC3149
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Product Specification
www.jmnic.com
2SC3149
Silicon NPN Power Transistors
4