JMNIC 2SB1558

JMnic
Product Specification
Silicon PNP Darlington Power Transistors
2SB1558
DESCRIPTION
・With TO-3PI package
・Complement to type 2SD2387
APPLICATIONS
・For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PI) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
-8
A
-0.1
A
80
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1558
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-7A ;IB=-7mA
-2.5
V
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
-3.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-7A ; VCE=-5V
5000
hFE-2
DC current gain
IC=-12A ; VCE=-5V
2000
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-5V
‹
CONDITIONS
hFE-1 Classifications
A
B
C
5000-12000
9000-18000
15000-30000
2
MIN
TYP.
MAX
-140
UNIT
V
30000
170
30
pF
MHz
JMnic
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SB1558