JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A ICM Collector current-peak -10 A IB Base current -1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1258 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-2V Transition frequency IE=0.2A ; VCE=-12V 100 MHz Collector output capacitance IE=0; f=1MHz;VCB=-10V 100 pF 0.6 μs 1.6 μs 0.5 μs fT COB CONDITIONS MIN TYP. MAX -100 UNIT V 1000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A; IB1=-IB2=-6mA VCC=-30V ,RL=10Ω 2 JMnic Product Specification 2SB1258 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3