Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1626 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD2495 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA 2.5 V VBEsat Emitter-base saturation voltage IC=5A; IB=5mA 3.0 V ICBO Collector cut-off current VCB=110V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V 60 MHz Collector output capacitance f=1MHz;VCB=10V 55 pF 0.8 μs 6.2 μs 1.1 μs fT COB CONDITIONS MIN TYP. MAX 110 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=-IB2=5mA VCC=30V ,RL=6Ω hFE Classifications O p Y 5000-12000 6500-20000 15000-30000 JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic 2SD2495