Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1625 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2494 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -110 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -1 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ 1 Inchange Semiconductor Product Specification 2SB1625 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-5m A -2.5 V VBEsat Base-emitter saturation voltage IC=-5 A;IB=-5m A -3.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-5A ; VCE=-4V fT Transition frequency IC=0.5A ; VCE=-12V 100 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 110 pF 1.1 μs 3.2 μs 1.1 μs -110 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=6Ω IB1=-IB2=-5mA VCC=-30V hFE classifications O P Y 5000-12000 6500-20000 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1625