Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2438 APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Tc=25℃) 固 SYMBOL VALUE UNIT -160 V -150 V -5 V Collector current -8 A IB Base current -1 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO VCEO VEBO IC PARAMETER Collector-base voltage Emitter-base voltage D N O IC Open emitter M E S GE N A H INC Collector-emitter voltage CONDITIONS Open base Open collector TC=25℃ 1 Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-6 A;IB=-6m A -2.5 V VBEsat Base-emitter saturation voltage IC=-6 A;IB=-6m A -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-6A ; VCE=-4V fT Transition frequency IC=-1A ; VCE=-12V COB Output capacitance 体 半导 ton Turn-on time ts Storage time tf Fall time MIN ANG INCH IC=-6A;RL=10Ω IB1=-IB2=-6mA VCC=-60V hFE classifications O P Y 5000-12000 6500-20000 15000-30000 2 MAX UNIT V 5000 65 R O T UC D N O IC M E S E TYP. -150 IE=0; VCB=-10V;f=1MHz 固电 Switching times CONDITIONS MHz 160 pF 0.7 μs 3.6 μs 0.9 μs Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3