Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2438 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1587 APPLICATIONS ・Audio, series regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A IB Base current 1 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ 1 Inchange Semiconductor Product Specification 2SD2438 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=6 A;IB=6m A 2.5 V VBEsat Base-emitter saturation voltage IC=6 A;IB=6m A 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=6A ; VCE=4V fT Transition frequency IC=1A ; VCE=12V 80 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 85 pF 0.6 μs 10.0 μs 0.9 μs 150 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A;RL=10Ω IB1=-IB2=6mA VCC=60V hFE classifications O P Y 5000-12000 6500-20000 15000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2438