JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD476/476A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SB566 Emitter-base voltage UNIT -70 V -50 Open base 2SB566A VEBO VALUE V -60 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collectorl power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO IC=-10μA ; IE=0 2SB566 MIN TYP. MAX -70 UNIT V -50 IC=-50mA; RBE=∞ V -60 2SB566A Emitter-base breakdown votage IE=-10μA; IC=0 VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.0 V VBEsat Base-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 μA hFE-1 DC current gain IC=-0.1A ; VCE=-4V 35 hFE-2 DC current gain IC=-1A ; VCE=-4V 60 Transition frequency IC=-0.5A ; VCE=-4V fT -5 V 200 15 MHz 0.3 μs 3.0 μs 2.5 μs Switching times ton Turn-on time toff Turn-off time tstg Storage time IC=-0.5A ; VCC=-10.5V IB1=-IB2=-0.05 A hFE-2 classifications B C 60-120 100-200 2 JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors 4