JMnic Product Specification 2SC2344 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1011 APPLICATIONS ・High voltage switching ・Audio frequency power amplifier; ・100W output predriver applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1.5 A ICM Collector current-Peak 3.0 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC2344 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Base-emitter breakdown voltage IC=10mA ,RBE=∞ 160 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.3 V VBE Base-emitter voltage IC=10mA ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 10 μA hFE DC current gain IC=0.3A ; VCE=5V fT Transition frequency IC=50mA ; VCE=10V 100 MHz Cob Output capacitance f=1MHz ; VCB=10V 23 pF 0.15 μs 0.81 μs 0.48 μs VCEsat 60 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=0.5A IB1=- IB2=50mA hFE Classifications D E 60-120 100-200 2 JMnic Product Specification 2SC2344 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC2344 Silicon NPN Power Transistors 4 JMnic Product Specification 2SC2344 Silicon NPN Power Transistors 5