JMNIC 2SB595

JMnic
Product Specification
2SB595
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD525
・High breakdown voltage :VCEO=-100V
・Low collector saturation volage
: VCE(sat)=-2.0V(Max)
APPLICATIONS
・Power amplifier applications
・Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-5
A
IE
Emitter current
-5
A
IB
Base current
-4
A
PC
Collectorl power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
2SB595
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
-100
V
V(BR)EBO
Emitter-base breakdown votage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-4A;IB=-0.4 A
-2.0
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-4A ; VCE=-5V
20
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
VCEsat
‹
CONDITIONS
hFE-1 classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
5
MHz
270
pF
JMnic
Product Specification
2SB595
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB595
Silicon PNP Power Transistors
4