JMnic Product Specification 2SA1633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-247 package ・Complement to type 2SC4278 ・High current and high power capability APPLICATIONS ・For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V -10 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1633 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-1A ; VCE=-10V fT CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. MAX -150 UNIT V 60 320 20 MHz JMnic Product Specification 2SA1633 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3