JMNIC 2SA1633

JMnic
Product Specification
2SA1633
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-247 package
・Complement to type 2SC4278
・High current and high power capability
APPLICATIONS
・For audio output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
-10
A
100
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1633
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-1A ; VCE=-10V
fT
CONDITIONS
‹ hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
MAX
-150
UNIT
V
60
320
20
MHz
JMnic
Product Specification
2SA1633
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3