Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1137 APPLICATIONS ・Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -4 V IC Collector current -4 A ICP Collector current-Peak -5 A PC Collector power dissipation Ta=25℃ 1.8 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ V(BR)EBO Emitter-base breakdown votage IE=-1mA; IC=0 Collector-emitter saturation voltage IC=-1 A;IB=-0.1 A -1.0 V ICEO Collector cut-off current VCE=-80V; RBE=∞ -100 Α IEBO Collector cut-off current VEB=-3.5V; IC=0 -50 Α hFE-1 DC current gain IC=-0.5A ; VCE=-4V 50 250 hFE-2 DC current gain IC=-50mA ; VCE=-4V 25 350 VCEsat CONDITIONS 2 MIN TYP. MAX UNIT -100 V -4 V Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB860 Silicon PNP Power Transistors 4