JMNIC 2SB1548

JMnic
Product Specification
2SB1548 2SB1548A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2374/2374A
・Low collector saturation voltage
・High forward current transfer ratio hFE
which has satisfactory linearity
APPLICATIONS
・For power amplifications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB1548
VCBO
Collector-base voltage
-60
Open base
2SB1548A
VEBO
Emitter-base voltage
V
-80
2SB1548
Collector-emitter voltage
UNIT
-60
Open emitter
2SB1548A
VCEO
VALUE
V
-80
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1548 2SB1548A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
voltage
CONDITIONS
2SB1548
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ; IB=0
2SB1548A
V
-80
Collector-emitter saturation voltage
IC=-3A ;IB=-0.375A
-1.2
V
VBE
Base-emitter voltage
IC=-3A ; VCE=-4V
-1.8
V
ICBO
Collector
cut-off current
-200
μA
-300
μA
-1
mA
ICEO
Collector
cut-off current
2SB1548
VCB=-60V; IE=0
2SB1548A
VCB=-80V; IE=0
2SB1548
VCE=-30V; IB=0
2SB1548A
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
70
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
Transition frequency
IC=-0.5A ; VCE=-10V
fT
250
30
MHz
0.5
μs
1.2
μs
0.3
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-1.0A IB1=-IB2=-0.1A
hFE-1 Classifications
Q
P
70-150
120-250
2
JMnic
Product Specification
2SB1548 2SB1548A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB1548 2SB1548A
Silicon PNP Power Transistors
4