JMNIC 2SD2222

Product Specification
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2SD2222
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PL package
・Complement to type 2SB1470
・High forward current transfer ratio hFE
・Low saturation voltage VCE(sat)
・DARLINGTON
APPLICATIONS
・For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
TC=25℃
120
Ta=25℃
3.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD2222
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=7mA
3.0
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=7mA
3.0
V
ICBO
Collector cut-off current
VCB=160V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=160V; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
1000
hFE-2
DC current gain
IC=7A ; VCE=5V
3500
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
160
UNIT
V
20000
20
MHz
2.0
μs
6.0
μs
1.2
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A ;IB1=-IB2=7mA
VCC=50V
hFE-2 classifications
Q
P
3500-10000
7000-20000
JMnic
Product Specification
www.jmnic.com
2SD2222
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
JMnic