Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W HiFi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICP Collector current-peak 8 A PC Collector power dissipation TC=25℃ 100 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1895 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter voltage IC=30mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 2.5 V VBEsat Emitter-base saturation voltage IC=7A ;IB=7mA 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 μA ICEO Collector cut-off current VCE=140V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 2000 hFE -2 DC current gain IC=7A ; VCE=5V 5000 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT 140 UNIT V 30000 20 MHz 2.0 μs 6.0 μs 1.2 μs Switching times ton Turn-on time tstg Storage time tf IC=7A; VCC=50V IB1=-IB2=7mA Fall time hFE-2 classifications Q P 5000-15000 8000-30000 JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic 2SD1895