JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB954 VCBO Collector-base voltage -60 Open base 2SB954A VEBO Emitter-base voltage V -80 2SB954 Collector-emitter voltage UNIT -60 Open emitter 2SB954A VCEO VALUE V -80 Open collector -5 V IC Collector current -1 A ICM Collector current-peak -2 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ 1 JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SB954 MIN TYP. MAX UNIT -60 IC=-30mA ;IB=0 2SB954A V -80 Collector-emitter saturation voltage IC=-1.0A ;IB=-0.125A -1.0 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.3 V ICEO Collector cut-off current -300 μA -200 μA -1 mA ICES Collector cut-off current 2SB954 VCE=-30V; IB=0 2SB954A VCE=-60V; IB=0 2SB954 VCE=-60V; VBE=0 2SB954A VCE=-80V; VBE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.2A ; VCE=-4V 70 hFE-2 DC current gain IC=-1A ; VCE=-4V 15 fT Transition frequency IC=-0.2A; VCE=-5V,f=10MHz ton Trun-on time ts Storage time tf Fall time IC=-1A ;VCC=-50V IB1=-0.1A, IB2=0.1A hFE-1 Classifications Q P 70-150 120-250 2 250 30 MHz 0.5 μs 1.2 μs 0.3 μs JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors 4