Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V 1 A 40 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Tmb=25℃ Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A 1.2 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA ICEO Collector cut-off current VCE=300V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 2 300 UNIT 30 V 200 Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3