Product Specification www.jmnic.com 2SC2578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complementary to 2SA1104 ・High Power Dissipation ・High Current Capability APPLICATIONS ・Audio power amplifier ・DC TO DC Converter PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V 7 A 70 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC2578 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 140 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 100 V V(BR)EBO Emitter-base breakdown voltage IC=0 ;IE=5mA 6 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE1 DC current gain IC=1A ; VCE=5V 55 hFE2 DC current gain IC=3A ; VCE=5V 50 Collector-emitter saturation voltage IC=3A ; IB=0.3A VCE(sat) JMnic 160 2 V Product Specification www.jmnic.com 2SC2578 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic