JMNIC 2SC2578

Product Specification
www.jmnic.com
2SC2578
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complementary to 2SA1104
・High Power Dissipation
・High Current Capability
APPLICATIONS
・Audio power amplifier
・DC TO DC Converter
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
6
V
7
A
70
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC2578
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
140
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
100
V
V(BR)EBO
Emitter-base breakdown voltage
IC=0 ;IE=5mA
6
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE1
DC current gain
IC=1A ; VCE=5V
55
hFE2
DC current gain
IC=3A ; VCE=5V
50
Collector-emitter saturation voltage
IC=3A ; IB=0.3A
VCE(sat)
JMnic
160
2
V
Product Specification
www.jmnic.com
2SC2578
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic