Inchange Semiconductor Product Specification 2SC2577 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1102 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V 6 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2577 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=4V Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20 MHz Inchange Semiconductor Product Specification 2SC2577 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3