JMnic Product Specification 2SC2792 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator and high voltage ・Switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-DC 2 A ICM Collector current-peak 4 A IB Base current 1 A PT Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC2792 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 850 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=50mA 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=0.5A ; VCE=5V 1.0 μs 4.0 μs 1.0 μs 10 Switching times tr tstg tf Rise time Storage time VCC=400V; 2IB1=-IB2=0.1A; RL=800Ω Fall time 2 JMnic Product Specification 2SC2792 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC2792 Silicon NPN Power Transistors 4