Product Specification www.jmnic.com 2SC3988 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage high reliability. ・Wide ASO (Safe Operating Area) ・Fast switching speed APPLICATIONS ・500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICP Collector current-peak 40 A IB Base current 8 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC3988 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V VCEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 500 V VEBO Emitter-base breakdown voltage IC=1mA ;IC=0 7 V VCEX(SUS) Collector-emitter sustain voltage IC=10A;IB1=-IB2=2A; L=200μH 500 V VCEsat Collector-emitter saturation voltage IC=12A IB=2.4A 1.0 V VBEsat Base-emitter saturation voltage IC=12A IB=2.4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=2.4A ; VCE=5V 15 hFE-2 DC current gain IC=12A ; VCE=5V 8 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 260 pF fT Transition frequency IC=2.4A ; VCE=10V 18 MHz 50 Switching times ton Turn-on time tstg Storage time 5IB1=-2.5IB2= IC=14A VCC≈200V;RL=14.3Ω Fall time tf hFE Classifications L M N 15-30 20-40 30-50 JMnic 0.5 μs 3.0 μs 0.3 μs Product Specification www.jmnic.com 2SC3988 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic