JMNIC 2SC5895

JMnic
Product Specification
2SC5895
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High speed switching
・Low collector saturation voltage
APPLICATIONS
・Power supply for audio and visual
equipments such as TVs and VCRs
・Industrial equipments such as DC-DC
converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-peak
4
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC5895
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
0.5
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.25 A
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
ICBO
Collector cut-off current
VCB=60V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=60V; IB=0
100
μA
hFE-1
DC current gain
IC=0.2A ; VCE=4V
60
hFE-2
DC current gain
IC=1A ; VCE=4V
80
hFE-3
DC current gain
IC=2A ; VCE=4V
30
Transition frequency
IC=0.1A ; VCB=10V;f=10MHz
fT
60
V
250
100
MHz
0.2
μs
0.7
μs
0.15
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=1A;IB1=-IB2=0.1A
VCC=50V
Fall time
2
JMnic
Product Specification
2SC5895
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3