Product Specification www.jmnic.com 2SD1296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 15 A ICM Collector current-peak 30 A PT Total power dissipation TC=25℃ 100 Ta=25℃ 3.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1296 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=15A ;IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=15A ;IB=30mA 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE DC current gain IC=15A ; VCE=2V 100 UNIT V 1000 30000 Switching times ton Turn-on time tstg Storage time IC=15A; IB1=-IB2=30mA VCC≈60V;RL=4Ω Fall time tf hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 JMnic 1.0 μs 5.0 μs 2.0 μs Product Specification www.jmnic.com 2SD1296 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic