JMnic Product Specification 2SC940 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Wide area of safe operation APPLICATIONS ・For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A ICM Collector current-peak 15 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Tmb=25℃ JMnic Product Specification 2SC940 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS hFE-2 Classifications O Q P 15-35 25-45 35-70 2 MIN TYP. 15 MAX UNIT 70 20 MHz JMnic Product Specification 2SC940 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3