JMNIC 2SD1441

Product Specification
www.jmnic.com
2SD1441
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Built-in damper diode
・High voltage ,high reliability
・High speed switching
・Wide area of safe operation
APPLICATIONS
・For horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
1500
V
5
V
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
4
A
ICM
Collector current (Pulse)
15
A
IBM
Base current (Pulse)
3.5
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
130
℃
Tstg
Storage temperature
-55~130
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD1441
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VEBO
Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=1A
1.5
V
VCB=750V; IE=0
50
μA
VCB=1500V; IE=0
1
mA
ICBO
hFE
V
Collector cut-off current
DC current gain
ts
Storage time
tf
Fall time
VF
5
UNIT
Diode forward voltage
IC=3A ; VCE=10V
IC=3A
IBend=1A,LLeak=5μH
IF=-4A,IB=0
JMnic
5
15
4
9
μs
0.8
μs
2.2
V
Product Specification
www.jmnic.com
2SD1441
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic