Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 5 V VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) 4 A ICM Collector current (Pulse) 15 A IBM Base current (Pulse) 3.5 A PC Collector power dissipation 70 W Tj Junction temperature 130 ℃ Tstg Storage temperature -55~130 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VEBO Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1A 1.5 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1 mA ICBO hFE V Collector cut-off current DC current gain ts Storage time tf Fall time VF 5 UNIT Diode forward voltage IC=3A ; VCE=10V IC=3A IBend=1A,LLeak=5μH IF=-4A,IB=0 JMnic 5 15 4 9 μs 0.8 μs 2.2 V Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic