SEMICONDUCTOR KF17N50N TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. G FEATURES D ・VDSS(Min.)= 500V, ID= 17A E L ・Drain-Source ON Resistance : M d RDS(ON)=0.35(Max.)Ω @VGS =10V ・Qg(typ.) =41nC P 1 P 2 T 3 MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V ID 17 @TC=25℃ Drain Current (Note1) IDP 45 Single Pulsed Avalanche Energy (Note 2) EAS 870 mJ Repetitive Avalanche Energy (Note 1) EAR 22.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns 223 W 1.79 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 0.54 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 40 ℃/W Tc=25℃ PD Derate above25℃ Maximum Junction Temperature Storage Temperature Range 1. Gate 2. Drain 3. Source TO-3P(N)-E A Pulsed Drain Power Dissipation DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T Thermal Characteristics Marking D 1 KF17N50 N 801 2 G S 2008. 10. 2 Revision No : 1 1 PRODUCT NAME 2 LOT NO 1/6 KF17N50N ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 500 - - V ID=250μA, Referenced to 25℃ - 0.5 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - VGS=10V, ID=8.5A - 0.3 0.35 - 41 - - 9 - - 17 - - 30 - RG=25Ω, - 21 - ID=17A - 162 - - 43 - - 1630 - - 244 - - 22 - - - 17 - - 68 RDS(ON) Drain-Source ON Resistance 100 nA Ω Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time Turn-off Fall time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=400V, ID=17A VGS=10V (Note4,5) VDD=250V, nC ns (Note4,5) VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=17A, VGS=0V - 0.9 - V Reverse Recovery Time trr IS=17A, VGS=0V, - 370 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 4.8 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 5.4mH, IAS=17A, VDD=50V, RG = 25Ω, Starting Tj = 25℃ Note 3) IS ≤17A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. 2008. 10. 2 Revision No : 1 2/6 KF17N50N Fig1. ID - VDS Fig2. ID - VGS 100 10 2 10 1 VDS=20V Drain Current ID (A) Drain Current ID (A) VGS=10V VGS=6V 10 VGS=5V 1 10 100 C 0 -1 0.1 10 0.1 10 1 4 3 100 On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 1.0 0.9 -50 0 50 100 VGS=6V VGS=10V 0.3 0.1 0 150 5 10 2 3.0 Normalized On Resistance Reverse Drain Current IS (A) 1 10 25 C 0 10 -1 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) Revision No : 1 20 25 30 Fig6. RDS(ON) - Tj 10 100 C 15 Drain Current ID (A) Fig5. IS - VSD 2008. 10. 2 10 0.5 Junction Temperature Tj ( C ) 0.4 9 0.7 VGS = 0V IDS = 250 0.2 8 Fig4. RDS(ON) - ID 1.1 10 7 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 0.8 -100 6 5 Drain - Source Voltage VDS (V) 1.2 25 C 1.6 1.8 2.5 VGS =10V IDS = 8.5A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/6 KF17N50N Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) Capacitance (pF) 104 Ciss 103 Coss 102 Crss 101 0 10 20 30 ID=17A VDS = 250V 8 VDS = 100V 6 4 2 0 0 40 VDS = 400V 10 5 15 10 20 25 35 30 40 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig10. ID - Tj Fig9. Safe Operation Area 102 18 101 Drain Current ID (A) Drain Current ID (A) 16 100µs 1ms 100ms 10ms Operation in this area is limited by RDS(ON) 100 DC 10-1 2 Tc= 25 C Tj = 150 C Single pulse 14 12 10 8 6 4 2 10 100 102 101 0 25 103 50 Drain - Source Voltage VDS (V) 75 100 125 150 Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve Transient Thermal Resistance 100 Duty=0.5 10-1 0.2 0.1 PDM t1 0.05 t2 0.02 10-2 0.01 10-5 - Rth(j-c) = 0.54 C/W Max. - Duty Factor, D= t1/t2 Single Pulse 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2008. 10. 2 Revision No : 1 4/6 KF17N50N Fig12. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2008. 10. 2 VGS Revision No : 1 td(on) ton tr td(off) tf toff 5/6 KF17N50N Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.8 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2008. 10. 2 VGS Revision No : 1 Body Diode Forword Voltage drop 6/6