SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌHigh Voltage : VCEO=120V. E B L L DIM A B C D E G H J K L M N P ᴌExcellent hFE Linearity ᴌHigh hFE: hFE=200ᴕ700. 3 G A 2 D : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). 1 ᴌComplementary to KTA1517S. P J N C P MAXIMUM RATING (Ta=25ᴱ) M K CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Base Current IB 20 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Type Name Lot No. AD ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 Ọ A DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency hFE (Note) VCE=6V, IC=2mA 200 - 700 VCE(sat) IC=10mA, IB=1mA - - 0.3 V fT VCE=6V, IC=1mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 4.0 - pF - 1.0 10 dB Collector Output Capacitance Cob Noise Figure NF Note : hFE Classification 2001. 2. 24 GR(G):200ᴕ400 Revision No : 3 VCE=6V, IC=0.1mA f=1kHz, Rg=10kή BL(L):350ᴕ700 1/3 KTC3911S h FE - I C I C - V CE DC CURRENT GAIN h FE 10 9 8 3 7 6 5 2 4 3 2 1 0 2 6 4 500 Ta=100 C 300 Ta=25 C Ta=-25 C 100 50 30 COMMON EMITTER V CE =6V I B =1µA 0 8 10 10 0.3 1 10 30 100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C I C - VBE 200 0.5 0.3 0.1 Ta=100 C 0.05 25 0.03 -25 0.01 0.3 1 3 10 30 100 400 COMMON EMITTER VCE =6V 160 120 80 40 Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =10 Ta=1 00 C 1 0 400 0 0.2 COLLECTOR CURRENT I C (mA) 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) C ob - V CB h PARAMETER - V CE 500 50 30 h fe 300 f=1MHz I E =0 100 Ta=25 C 10 h PARAMETER COLLECTOR OUTPUT CAPACITANCE C ob (pF) 3 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) 0 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) 1k COMMON EMITTER Ta=25 C 5 3 1 COMMON EMITTER I E =-1mA f=270Hz Ta=25 C 30 10 h ie (xkΩ) h re (x10 -5) 3 0 10 20 30 40 50 60 70 COLLECTOR-BASE VOLTAGE V CB (V) h oe (xµ 80 1 1 3 10 Ω COLLECTOR CURRENT I C (mA) 4 ) 30 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 2. 24 Revision No : 3 2/3 KTC3911S NF - R g , I C h PARAMETER - I E h PARAMETER 100k COMMON EMITTER VCE =6V f=270Hz h fe 100 50 30 h h re ie (x (x 1 kΩ ) 0 -5 10 5 3 ) Ω h oe (xµ ) 1 -10 -50 -100 -300 -1000 -3000 -10000 SIGNAL SOURCE RESISTANCE R g (Ω) 1k 500 300 EMITTER CURRENT I E (µA) COMMON EMITTER VCE =6V 12 f=10Hz 10 8 10k NF =1 NF dB 10 12 100 8 6 3 =1d 1k 4 2 B 2 3 6 4 10 10 100 1k 10k COLLECTOR CURRENT I C (µA) 12 6 NF =1 2 1k 10 8 10k 3 COMMON EMITTER VCE =6V f=1kHz dB NF 4 100 3 =1 d 2 B 6 10 12 8 10 10 100 1k COLLECTOR CURRENT I C (µA) 2001. 2. 24 Revision No : 3 10k COLLECTOR POWER DISSIPATION PC (mW) 100k 4 SIGNAL SOURCE RESISTANCE R g (Ω) NF - R g , I C P C - Ta 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 3/3