Transistors IC SMD Type NPN General Purpose Transistor 2PD602A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage (max. 50 V). 0.55 High current (max. 500 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Peak base current IBM 200 mA Total power dissipation Tamb 25 ; * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type 2PD602A Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Testconditons Max Unit 10 nA IE = 0; VCB = 60 V; Tj = 150 5 ìA IC = 0; VEB = 4 V 10 nA 2PD602AQ 2PD602AR hFE IC = 150 mA; VCE = 10 V; * 2PD602AS DC current gain Collector-emitter saturation voltage Collector capacitance 240 170 340 IC = 300 mA; IB = 30 mA; * 600 mV IE = ie = 0; VCB = 10 V; f = 1 MHz 15 pF 140 fT IC = 50 mA; VCE = 10 V; f = 100 MHz * 160 180 * Pulse test: tp 300 ìs; ä 0.02. Marking Type Number 2PD602AQ 2PD602AR 2PD602AS hFE XQ XR XS www.kexin.com.cn 120 VCEsat 2PD602AS 2 170 IC = 500 mA; VCE = 10 V; * 2PD602AQ 2PD602AR 85 hFE Cc Transition frequency Min IE = 0; VCB = 60 V MHz