KEXIN 2PB709A

Transistors
IC
SMD Type
PNP General Purpose Transistor
2PB709A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Low voltage (max. 45 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
Low current (max. 100 mA)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-45
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-6
V
Collector current (DC)
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-100
mA
mW
Ptot
250
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
500
Total power dissipation(Tamb
25 ; *)
K/W
* Transistor mounted on an FR4 PCB.
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1
Transistors
IC
SMD Type
2PB709A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Testconditons
IE = 0; VCB = -45 V
IE
Emitter cut-off current
DC current gain
= 0; VCB = -45 V; Tj = 150
IEBO
IC = 0; VEB = -5 V
hFE
IC = -2 mA; VCE = -10 V
2PB709AQ
2PB709AR
2PB709AS
Collector capacitance
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
fT
IC = -1 mA; VCE = -10 V; f = 100 MHz
2PB709AQ
2PB709AR
300 ìs; ä
0.02.
TYPE
2PB709AQ
2PB709AR
2PB709AS
Marking
BQ
BR
BS
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-10
nA
-5
ìA
-10
nA
160
260
340
290
460
70
80
hFE Classification
2
Unit
-500
mV
5
pF
60
2PB709AS
* Pulse test: tp
Max
210
VCE(sat) IC = -100 mA; IB = -10 mA *
Collector-emitter saturation voltage
Transition frequency
Min
MHz