Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB = 40 V, IE = 0 Emitter cut-off current IEBO VEB = 5 V, IC = 0 DC current gain hFE VCE = 1 V, IC = 10 mA Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 1 mA Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 1 mA Transition frequency fT VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ 40 Max Unit 0.1 ìA 0.1 ìA 240 0.3 1.0 200 400 4 V V MHz 6 pF Collector output capacitance Cob Turn-on time ton 70 ns Storage time tstg 15 ns tf 30 ns Fall time hFE Classification CH Marking Rank R O Y hFE 40 80 70 140 120 240 www.kexin.com.cn 1