Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1738 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High-speed switch 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector to emitter saturation voltage VCE(sat). +0.05 0.1-0.01 +0.1 0.97-0.1 Mini type package, allowing downsizing of the equipment and 0-0.1 +0.1 0.38-0.1 automatic insertion through the tape packing and the magazine packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -4 V Collector current IC -50 mA Peak collector current ICP -100 mA mW Collector power dissipation PC 200 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1738 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO VCB = -8 V, IE = 0 Emitter cutoff current IEBO VCE = -3 V, IC = 0 Forward current transfer ratio hFE Collector-emitter saturation voltage fT Collector output capacitance Cob Turn-on time ton Turn-off time toff Storage time tstg Note 1: hFE Classification AK Marking Rank Q R hFE 50 120 90 150 www.kexin.com.cn Min VCE = -1 V, IC = -10 mA 50 VCE = -1 V, IC = -1 mA 30 VCE(sat) IC = -10 mA, IB = -1 mA Transition frequency 2 Testconditons VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -5 V, IE = 0, f = 1 MHz Note 1 Typ Unit -0.1 ìA -0.1 ìA 150 -0.1 800 Max -0.2 V 1500 MHz 1 pF 12 ns 20 ns 19 ns